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| 2SK1862, 2SK1863 Silicon N Channel MOS FET Application TO-220FM High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator 2 12 3 1 Table 1 Ordering Information Type No. 2SK1862 2SK1863 VDSS 3 1. Gate 2. Drain 3. Source ---------------------------------------- 450 V 500 V ---------------------------------------- ---------------------------------------- Table 2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1862 Symbol VDSS VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1863 Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature ------ 500 30 3 12 3 25 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1862, 2SK1863 Table 3 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1862 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1863 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1862 V(BR)GSS IGSS IDSS ---- 500 20 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1863 Gate to source cutoff voltage VGS(off) 2.0 -- -- 1.5 -- 2.0 2.2 2.5 3.0 2.8 3.0 -- S ID = 2 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 2 A VGS = 10 V RL = 15 V ------------------ VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Static drain to source 2SK1862 RDS(on) on state resistance -------- 2SK1863 Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr ID = 2 A, VGS = 10 V * ---------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1153, 2SK1154 -- -- -- -- -- -- -- -- 330 90 15 7 20 30 20 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 3 A, VGS = 0 IF = 3 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 300 -- ns -------------------------------------------------------------------------------------- 2SK1862, 2SK1863 Power vs. Temperature Derating 30 Channel Dissipation Pch (W) 30 10 Drain Current I D (A) 20 3 1 0.3 0.1 Maximum Safe Operation Area 10 ion is n) PW 1 at a (o m = er are DS ps R 10 s O hi y D tb m (T C O in ed s c (1 it = pe m Sh li 25 ra tio ot C ) )n Ta = 25C 2SK1862 2SK1863 10 s 0 10 s 0.03 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1.0 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s(t) . ch - c ch - c = 5.0C / W, Tc = 25C PW D= T P DM T 1m 10 m Pulse Width PW (S) 100 m PW 0.1 0.05 0.02 ot P ulse 0.03 0.01 0.01 10 1 sh 100 1 10 |
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